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Người trình bày: TS. Cấn Thị Thu Thủy

Thời gian: 15h00 Thứ Bảy, ngày 02 tháng 12 năm 2023

Địa điểm: Phòng 222 Khoa Vật lí, 136 Xuân Thủy, Cầu Giấy, Hà Nội

Water-based solution synthesis for a MoS2 atomic layer with

large scale and its application to TFTs using printing process

In this study, a deionized water-based solution process was developed for MoS2 thin film by bottom-up thermolysis method for the first time. This method was relatively easy to handle, safe and environmentally friendly process. The MoS2 atomic layers were completed without sulfurization and with a single step of annealing. Thin film transistors (TFTs) were prepared from the solution-processed MoS­2 on Al2O3 and SiO2 dielectric with thermal evaporated Al source and drain. Electrohydrodynamic jet printing process for Ag electrodes was also applied to fabricated TFTs. The best result shows an improved mobility of 8.5 cm2V-1s-1 and a reasonable on-off current ratio of about 1.0105 with solid output saturation. This new methodology can be applied to multifarious devices and has the potential for scalability in 2D materials.